inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK788 description drain current C i d =13a@ t c =25 drain source voltage- : v dss = 500v(min) fast switching speed applications designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 13 a p tot total dissipation@tc=25 150 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK788 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 500 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 7a 0.38 0.50 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =500v; v gs = 0 300 ua tr rise time v gs =10v;i d =7a; r l =30 70 140 ns ton turn-on time 100 200 ns tf fall time 75 150 ns toff turn-off time 350 700 ns v sd diode forward voltage i f = 13a; v gs =0 1.7 v pdf pdffactory pro www.fineprint.cn
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